Counterbalancing effects of bowing in gallium nitride templates by epitaxial growth on pre-strained sapphire substrates

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To minimize bowing in a gallium nitride (GaN) template, which is caused by differences in the properties of the GaN film and the sapphire substrate, we studied how to offset bowing by directly growing GaN using the hydride vapor phase epitaxy (HVPE) method on the frontside of a pre-strained sapphire substrate prepared using a backside grinding process. The relationships between the respective thicknesses and stresses of the undamaged sapphire, damaged sapphire, and GaN layers were analyzed by deriving the bow formula, which is a modification of Freund's equation, and the theoretical formula-derived results were compared with experimentally determined values. The bow of the GaN template was measured using a micrometer, and the residual stresses in the GaN and sapphire, carrier mobilities, and GaN crystal qualities were measured using a micro-Raman spectrophotometer. The results confirmed the annealing effect on the damaged sapphire layer, and the introduction of pre-strained GaN templates facilitated easier bow control compared to that afforded by a conventional GaN template. Additionally, we identified trends and optimal conditions for changes in residual stress, carrier mobility, and crystal quality in GaN and the damaged sapphire layer based on layer thickness and stress variations. We explain the mechanisms responsible for changes in bow, stress, carrier mobility, and crystal quality of the GaN template.