Abstract
The “top” intergenerator part situated between the GaInP and GaAs subcells (electric power generators) is analyzed. The shape of the light current–voltage characteristics and the Voc–Jsc (open-circuit voltage–short-circuit current) dependence are examined. It is found that the p+–n+ tunnel heterojunction situated in the “top” intergenerator part can operate as a photoelectric source counteracting the base p–n junctions. In this case, the Voc–Jsc characteristic has a descending part, and a sharp jump can be observed. This undesirable effect becomes weaker with increasing peak current of the tunnel junction.
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