Abstract
A metal-oxide-semiconductor field-effect transistor (MOSFET) with a novel channel structure called a counter-doped surface channel (CDSC) is proposed. A unique characteristic of the CDSC MOSFET is that the channel current still exists at the surface, even though the counter-doped layer is formed. Experimental results confirm that the CDSC pMOSFET using an n+ poly-Si gate has the highest current drivability and the steepest subthreshold slope while maintaining a good short-channel-effect immunity compared with the surface channel (SC) and buried channel (BC) pMOSFET. The delay time with the CDSC pMOSFET represents 1.34-fold improvement in comparison to that with the SC pMOSFET.
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