Abstract
The conductance of narrow wires, defined by a split-gate technique in the twodimensional electron gas in a modulation-doped GaAs-Al x Ga 1-x As heterostructure, is studied experimentally as a function of gate voltage, temperature, and magnetic field. Both intentionally (Be doped) and unintentionally disordered wires are investigated. Periodic conductance oscillations as a function of gate voltage are found in both systems, in the regime where only a few hundred electrons are present in the wire
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