Abstract
Nanometer-sized Au dots have been fabricated on p-type Si(111) substrates by field-induced transfer of tip material in a scanning tunneling microscope (STM). Positioning the STM tip on a very small dot (10–15 nm in diameter) allows observation of equidistant steps with a spacing of several 100 mV and regions with negative differential resistance (NDR) in the current-voltage characteristic. Numerical simulations confirm that the capacitance between the tip and the Au dot falls into the 10 −19 F range. The occurrence of NDR might be explained by a leaking of excess carriers from the dot to the immediate surroundings.
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