Abstract
Infrared spectra of double-acceptor impurities in Si and Ge show small splittings. This fine structure cannot be explained by a split ground-state manifold only. An analysis of the Coulomb hole-hole splitting of the excited states, an estimate of the parameters involved, and dipole transition probabilities between the various ground-state symmetries and the excited states are presented. The spacing of accessible states may be large enough to be experimentally resolved.
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