Abstract
Large Coulomb barriers exceeding several hundred meV are estimated for capture and emission rates into trap centers at the SiO 2-Si interface of MOS structures. The Coulomb energy is added to the equilibrium level energy for a trap center that is repulsively charged when occupied. Quantitative agreement of the calculated Coulomb energy is obtained with trapping rates measured for single individual traps in sub- μm MOSFETs by random telegraph signals.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
