Abstract
Charges trapped in the gate dielectric and acting as long-range scatterers can have a significant effect on carrier transport in graphene-based nanodevices. In this study, we theoretically investigated the charge capture kinetics of short-distance channel-defect interactions in graphene nanoribbon nanodevices by employing the nonradiative multiphonon theory in conjunction with the Coulomb energy ($\ensuremath{\Delta}E$). The peaks that emerged from the electron capture rate strongly correlated with the singularity characteristics of a one-dimensional (1D) density of states. Furthermore, we elaborate herein on how the value of $\ensuremath{\Delta}E$ plays a decisive role in determining the capture kinetics for the trapping of channel carriers in the interface dielectric defects in 1D nanodevices.
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