Abstract
Abstract Intrinsic degradation in 100 nm AlQ3 OLED device with strong luminescence was observed while nearly no degradation in 50 nm AlQ3 device with weak luminescence was observed for the same operation time. Based on the EL and PL measurements, it was suggested that penetration of AlQ3 molecules into NPB layer resulted in the increase of electron leakage current, and thus significant loss of current efficiency. A plausible Coulomb effect induced intrinsic degradation mechanism was therefore proposed to explain the experimental results.
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