Abstract
Beam blurring due to Coulomb effects is very important in cell projection lithography. This article reports on Coulomb effects in cell projection lithography by simulation and experiment, and shows some important results. First, the Coulomb effect in a single cell is substantially uniform in conventional cell projection optics. Second, refocusing is effective in reducing the space charge effect even in Koehler illumination with a Gaussian crossover. Third, the optimum cell size in the case of a large aperture percentage depends on the ratio of the total exposure time in the peripheral circuit to the total settling time in the memory cell mat. In addition, a modified mask technique is proposed to decrease the influence of Coulomb effects on throughput.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
