Abstract
We study the effect of spin Coulomb drag on the magnetoresistance and the spin-current injection efficiency of a layered structure consisting of a nonmagnetic semiconductor sandwiched between two ferromagnetic electrodes of spin polarization p. The calculations are done within the framework of the drift–diffusion theory, which we generalize to include the spin trans-conductivity σ ↑↓. We find that for p close to 100% the spin drag enhances the magnetoresistance, while for smaller values of p it reduces it. A new approach to the measurement of σ ↑↓ is suggested.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
