Abstract
We analyze the response of lateral n+-i-n-n+ graphene field-effect transistors (GFETs) to terahertz (THz) radiation. The nonlinearity due to the Coulomb drag of quasi-equilibrium carriers by injected ballistic carriers accompanied by plasmonic oscillations in a GFET channel enables a resonantly strong response. This effect can be used for effective resonant detection of THz radiation.
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