Abstract
The quantum confined energy levels in Ge quantum dots and the coulomb charging energy per added hole can be derived by deep level transient spectroscopy (DLTS). The number of holes captured by quantum dots can be controlled by varying the width of applied pulse voltage in the DLTS measurement. The Coulomb charging energy per added hole can be deduced from the energy step of the activation energy in the filling time dependent deep level transient spectra. The experiment results are confirmed by computer simulation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
