Abstract
The current–voltage characteristics of one-dimensional tunnel junction arrays are simulated using the semiclassical and full capacitance matrix description. The threshold voltage V th of the Coulomb blockade (CB) is evaluated and analyzed in detail as a function of the gate capacitance C 0, the array length N, the temperature, and the degree of disorder. The disordered effect is found to be essential, while the long range interaction included in the full capacitance matrix calculations, when decreasing V th, weakly affects the qualitative behaviour of the CB for the V th( C 0) and the V th( N) dependences.
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