Abstract
Silicon nanoparticles (Si-nps) embedded in silicon oxide matrix werecreated using silicon-rich oxide (SRO) films deposited by low pressurechemical vapour deposition (LPCVD) followed by a thermal annealing at1100 °C. The electrical properties were studied using metal–oxide–semiconductor (MOS)structures with the SRO films as the active layers. Capacitance versus voltage(C–V) exhibited downward and upward peaks in the accumulation region related to chargetrapping and de-trapping effects of Si-nps, respectively. Current versus voltage(I–V) measurements showed fluctuations in the form of spike-like peaks and a clear staircase atroom temperature. These effects have been related to the Coulomb blockade (CB) effect inthe silicon nanoparticles embedded in SRO films. The observed quantum effects are due to1 nm nanoparticles.
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