Abstract
The previous chapters of this book concentrated on the intensity noise suppression of light generated by a p-n junction light emitter in the macroscopic limit, where the charging energy due to a single carrier traversing the depletion region of the junction is negligible compared to the characteristic thermal energy of the system. With today’s semiconductor fabrication and cryogenic technologies, it is possible to reach the opposite regime where the single carrier charging energy, e2/C, is larger than the thermal energy, kBT. The next two chapters will describe p-n junctions operating in this mesoscopic limit, where a single-carrier injection event completely suppresses the rate for a subsequent carrier-injection event. Such limit was first discussed in the context of mesoscopic M-I-M junctions [10, 11], and is commonly referred to as Coulomb blockade effect [79].
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