Cotunneling of holes in silicon-based structures.

Abstract

Inelastic cotunneling of holes through double-tunnel-junction systems fabricated in δ-doped silicon-germanium layers was studied for bias voltages below the Coulomb blockade threshold. The inelastic, linear, finite-temperature cotunneling term dominates for lower voltages while the zero-temperature, cubic cotunneling term dominates for higher voltages below the Coulomb blockade threshold for temperatures above 4.2 K.