Abstract
ABSTRACTIn this work, Co/Ti multilayers were deposited on Si-(100) substrates by dual source thermal evaporation. Oxygen was found to be selectively incorporated into the Ti layers during the deposition. The samples were then treated by a two step annealing process. A —6nm Co2Si + CoSi2 layer was formed at the original Ti/Si interface after a 550°C, 2hr. annealing. The Ti(O) layers acted as selective diffusion membrane for Co and Si during this interaction. The morphology of the suicide layer was dependent on the thickness of the Ti(O) barrier layer. Selective removal via wet etching of the upper layers and a 750°C annealing produced stoichiometric and uniform epitaxial cobalt disilicide with a reduced film resistivity. A very flat top surface with no sign of groving or agglomeration and a much improved interface with the Si substrates were obtained.
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