Abstract
Evidence is presented that a reactive capping layer may influence the interfacial reaction in a thin film diffusion system. As a prototype system, we describe the CoSi2 formation in the Ti/Co/SiOx/Si system. We observed that Ti from the capping layer transforms the SiOx diffusion barrier into a CoxTiyOz diffusion membrane, initiating silicide formation. The CoSi2 layer that is formed has a preferential epitaxial orientation. The epitaxial quality is dependent on annealing temperature, Co and Ti thickness. The epitaxial growth may be explained by a combination of Ti-interlayer mediated epitaxy and oxide mediated epitaxy.
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