Abstract
We fabricated Co-coated SiO x nanowires and investigated the effects of thermal annealing on their properties. The sputtering process resulted in the formation of a relatively smooth Co shell layer, whereas subsequent thermal annealing generated the Co 3O 4 phase. The photoluminescence (PL) spectrum was not changed by the Co-coating, whereas the thermal annealing induced new peaks in the yellow and ultraviolet regions. Possible emission mechanisms were discussed. Based on the magnetization measurements of the SiO x -core/Co-shell nanowires, we obtained small and negligible hysteresis loops for the as-fabricated and thermal annealed samples, respectively.
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