Corundum-structured α-Fe2O3 substrates for α-Ga2O3 epitaxial growth

Abstract

The present study demonstrated the growth of α-Ga2O3 epitaxial thin films on α-Fe2O3 substrates via mist chemical vapor deposition. XRD analysis revealed that c-plane α-Ga2O3 thin films were epitaxially grown on a c-plane α-Fe2O3 substrate. The full width at half maximum for asymmetric diffraction (10–14) of α-Ga2O3 using α-Fe2O3 was lower than that obtained using α-Al2O3. Moreover, the XRD pole figure results revealed that α-Ga2O3 on α-Fe2O3 exhibited no in-plane rotations. We believe that α-Fe2O3 wafers with small lattice mismatches are promising substrates for α-Ga2O3 without rotational domains.