Abstract
With the use of plastic encapsulation for semiconductor devices, the prevention of metallization corrosion has become one of the most important problems to be solved. A method for the evaluation of metallization materials has been devised so as to be able to predict the performance of the plastic‐encapsulated devices in temperature‐humidity‐bias test with the acceleration of the order of 103 times. This method has been used to find an Al‐Mn metallization which is more corrosion resistant than that using pure Al.
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