Abstract
The impact of dissolved oxygen (O2) on cobalt (Co) corrosion in dilute HF (dHF) solution was studied. It was confirmed that Co etch rate was enhanced as the amount of dissolved O2 in the HF solution increased. The Co etch rate was also found to increase radially outward when performed on a single-wafer spin process in atmospheric air due to the uptake of O2 during the dispense process. The galvanic corrosion of Co was investigated with two types of structures with a Co/Cu interface in different dissolved O2 concentrations, i.e. (1) Co bump structures on Cu and (2) Cu lines with a Co/TaN liner/barrier structure. By controlling both the dissolved and the atmospheric O2 levels, galvanic corrosion prevention at the Co/Cu interface was achieved.
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