Corrigendum: Chemical Activity of Thin Oxide Layers: Strong Interactions with the Support Yield a New Thin-Film Phase of ZnO.

Abstract

Small Cu particles supported on and most likely activated by a ZnO substrate are the active component in the industrial catalyst used to convert syngas (H2, CO, CO2) into methanol, the third most important chemical product worldwide. Although a topic of intense research, the nature of the active site is still under debate. Recently, it has been pointed out that Zn atoms present at the surfaces of the Cu particles exhibit pronounced chemical activity and could explain some of the experimental findings. Another interesting suggestion is the presence of a thin layer of ZnOx species which forms on the surface of the Cu particles under reaction conditions. The importance of such thin oxide layers on the surface of metals under reaction conditions has already been pointed out in other contexts, where it was found that their chemical properties may differ substantially from those of the corresponding bulk oxides. In the case of ZnO this question is particularly interesting, since strong interactions between ZnO and the supporting metal have been reported for ZnO/ Cu and in recent work thin layers of ZnO have been shown to adopt a depolarized, graphitic structure, ZnO(gr), different from the wurtzite-type bulk. The properties of oxide thin films supported on metal substrates have been successfully studied in a number of cases, for example, for thin aluminum oxide films grown by oxidation of Ni/Al alloys. In contrast, the chemical activity of ZnO thin films supported on Cu single crystals has been investigated in a few cases only. Maroie et al. have investigated the adsorption and oxidation processes for single-crystal brass(110), brass(100), and brass(111) surfaces by X-ray photoelectron spectroscopy (XPS). Brass(110) and brass(111) show the same behavior with regard to the interaction with oxygen: the dissociative adsorption of oxygen on the surface is followed by the growth of thin ZnO layers. Wiame et al. reported that after oxidation of (111)-oriented Cu0.7Zn0.3 samples at room temperature the surface is covered by ZnO islands; it was suggested that these islands have (0001) and (0001) surface terminations. A more detailed characterization of the chemical properties of the thin ZnO layers was not carried out in this early work. In the present paper we report a detailed multitechnique investigation of a brass(111) single-crystal substrate (Cu/Zn ratio 9:1) subjected to different oxidation procedures using scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and Fourier transform infrared spectroscopy (FTIR) under ultrahigh vacuum (UHV) conditions. The experimental findings are then interpreted by comparison with the results of a rather extensive set of density functional theory (DFT) calculations. Our results reveal the growth of thin ZnO adlayers with chemical properties that are markedly different from those of normal, wurtzite-type ZnO substrates. XPS data recorded for the brass(111) surface before and after different oxidation procedures for two different exit angles of the photoelectrons are shown in Figure 1. Since it is difficult to discriminate between Cu and Cu on the basis of XPS data, also the corresponding results from Auger electron spectroscopy (AES) are shown. For the clean brass(111) substrate the data indicate a Zn atom concentration of 5%, clearly lower than the 10% expected based on the bulk Cu/Zn ratio. Upon oxidation, the XPS data reveal an increase of the surface Zn concentration. Since it is a crucial question whether, in addition to Zn, also Cu or Cu is present, we have carefully analyzed the XPS and AES data. Neither in the Cu2p XPS data nor in the Cu L3M45M45 Auger data were the characteristic signatures of Cu or Cu species resulting from an oxidation of copper atoms detected. Cu exhibits a L3M45M45 peak at electron kinetic energies of 915 eV– 917 eV, which is clearly absent in the present data (see Figure 1). This observation, which agrees with the conclusions presented in a previous study by Rameshan et al., is expected, since in the presence of the less noble Zn one would expect the formation of ZnO to precede that of CuxO. Oxidation at elevated temperatures results in a substantial increase of the Zn signal, revealing the formation of thicker ZnO adlayers. The thickness of these thin ZnO layers was determined from the intensity of the Zn2p3/2 and Cu2p3/2 XPS signals. Exposure of the samples to 500 L of O2 at room temperature yields a ZnO adlayer with an average thickness of about 1.7 , consistent with the presence of a monolayer. More extended exposures to oxygen at room temperature did not result in a significant further increase of the thickness of the ZnO layer. Even the oxidation of the brass substrate at [*] Dr. V. Schott, Dr. A. Birkner, Dr. M. Xu, Dr. Y. Wang Chair of Physical Chemistry Ruhr-University Bochum (Germany)