Abstract
Scientific Reports 5: Article number: 15266; published online: 16 October 2015; updated: 07 July 2016 The Authors neglected to cite previous studies related to the existence of intersubband spin-orbit coupling and the use of intersubband spin-orbit coupling to create topological insulator in double quantum wells with antidote lattices.
Highlights
In the Introduction section, “In this work, we demonstrate that conventional semiconductor GaAs/InxGa1−xAs/GaAs two-dimensional electron gas (2DEG) with antidot lattices can be driven into the TI phase.”
Should read: “In this work, we demonstrate that conventional semiconductor GaAs/InxGa1−xAs/GaAs two-dimensional electron gas (2DEG) with antidot lattices can be driven into the TI phase
New methods for creating topological insulating phase have been proposed[20,1] which utilize periodic modulations and spin-orbit coupling in conventional semiconductors, including two-dimensional hole gases[20] and conduction electrons in double quantum wells[1]. The former exploits the strong intrinsic spin-orbit coupling in the valence band to produce a TI operating at liquid nitrogen temperatures, while the latter typically operates at sub-liquid-helium temperatures due to small minigap.”
Summary
“In this work, we demonstrate that conventional semiconductor GaAs/InxGa1−xAs/GaAs two-dimensional electron gas (2DEG) with antidot lattices can be driven into the TI phase.”. In the Introduction section, “In this work, we demonstrate that conventional semiconductor GaAs/InxGa1−xAs/GaAs two-dimensional electron gas (2DEG) with antidot lattices can be driven into the TI phase.” Should read: “In this work, we demonstrate that conventional semiconductor GaAs/InxGa1−xAs/GaAs two-dimensional electron gas (2DEG) with antidot lattices can be driven into the TI phase.
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