Abstract
It has been observed that activation energies of electron traps in GaNAs layers of various nitrogen concentrations vary consistently if the N-related changes in the band structure of GaNAs and energy positions of donor levels are plotted relative to the valence band edge on the same diagram. Within this diagram, it is expected that the activation energy of electron traps of the same microscopic nature should decrease with the increase of nitrogen concentration. The identification of electron traps in GaNAs within the proposed diagram allows to interpret the broad emission at ∼0.9 eV as the donor trap–valence band and the donor acceptor pair recombination involving of these traps.
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