Abstract
Abstract Cupric oxide (CuO) films were grown by radio frequency (RF) reactive sputtering technique. The relation between the deposition parameters andthe film structure was investigated aiming to obtain a CuO film with (111) preferential orientation at room temperature. High correlation between the CuO phase and pressure was found. Also,the preferential growthwas obtained controlling the RF power and O2 flow. Moreover, a high temperature growth of CuO was replaced by high RF power at RT. Finally, a Ru buffer layer enhanced the surface morphologyand the crystallinity of CuO along the [111] direction at room temperature.
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