Abstract
Metal–organic vapor phase epitaxy of III–nitride light-emitting diode (LED) structures is analyzed by coupled process-device modeling. Different recipes to grow active regions of the structures are examined. The major attention is given to the impact of process recipe on indium composition profile in the active region. Correlations between the composition profiles and device characteristics are discussed. We have focused on the analysis of LED structures with short-period superlattice active regions providing improved efficiency, reduced efficiency droop, and high emission wavelength stability with current. Performances of the structures grown with various recipes are compared to find the most promising growth procedure and evaluate its impact on the operation of the LED heterostructure.
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