Abstract
In this letter, we investigated the correlation between as-grown surface morphologies and Mn compositions of Ga 1− x Mn x As epilayers—a III–V-diluted magnetic semiconductor—grown by liquid phase epitaxy (LPE). Ga 1− x Mn x As epilayers were grown at 595 °C from 50% Ga+50% Bi mixed solvent. The grown layers were characterized by energy dispersive X-ray analysis (EDS) and atomic forced microscopy (AFM). The Mn composition measured by EDS after growth process was varied from 1% to 7%. As increasing Mn composition surface morphologies of as-grown Ga 1− x Mn x As epilayers were varied. At higher Mn compositions, the morphology of the surface layers degrades strongly, preventing removal of the solution-melt from it.
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