Abstract
Neutron irradiated high resistivity silicon detectors have been subjected to isochronous annealing in order to study the changes in the full depletion voltage and the leakage current. The corresponding evolution of bulk damage induced defect levels was monitored using the TSC method. A single TSC peak is found to be correlated with the transient decay of the depletion voltage which is observed after elevated temperature annealing of inverted detectors. In conjunction with deep level parameters obtained from an I-DLTS study and changes observed in the effective doping concentration and in the leakage current after exposure to high doses of /sup 60/Co-gammas, new insight is gained into the radiation induced device deterioration and the corresponding annealing behavior.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
