Abstract
A study of the dependence of postetch residues on deposition temperature was carried out on Al(1%Si), Al(2%Cu), Al(4%Cu), and . The postetch residues were analyzed using Auger electron spectroscopy, and correlated to the film structure which was characterized using Auger depth profiling, and cross‐sectional and planar transmission electron microscopy. The residues seen for the Al(1%Si) and Al(Cu) alloys could be explained on the basis of the size and distribution of a secondary phase involving the alloying element. The results for the also indicated a dependence on film structure. In general, residue free etching could be obtained for alloys deposited at temperatures below 200°C.
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