Abstract
We have measured the photoreflectance (PR) spectra at 300 K and dc current gain for GaInP/GaAs heterojunction bipolar transistors (HBTs) grown by metalorganic chemical vapor deposition with different growth conditions. From the observed Franz–Keldysh oscillations, we have evaluated the built-in dc electric fields and associated band gaps in the GaInP emitter and GaAs collector regions. The observed increase in current gain with the low GaInP band gap is in agreement with band alignment between partially ordered GaInP and GaAs, but the observed current gain is not strongly dependent on electric field. For samples with comparable GaInP band gaps we have thereby detected a limiting factor, base bulk recombination, governing the current gain of HBTs from Gummel plots.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
