Abstract
Protons have been introduced into the 40 nm gate oxides of n-channel metal–oxide–semiconductor field-effect transistors, resulting in the creation of mobile and fixed positive charge. Transistor gate lengths in the range from 5 to 70 μm have been studied. Hysteresis in the threshold voltage as large as −18 V has been measured. An inverse linear relationship has been found between the quantity of mobile and fixed charge generated. The inversion channel electron mobility is found to lie in the range 310–530 cm2 V−1 s−1.
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