Abstract
A set of TiNx films grown on quartz substrates at temperatures between 140 and 850 °C have been characterized by x-ray absorption fine structure and x-ray photoelectron spectroscopy measurements. Ti coordination number, crystal structure, and relative proportions of film constituents in particular valence states have been determined as a function of deposition temperature, and are related to measured optical and electrical properties. Measurements show that polycrystalline material with the B1-NaCl structure is formed at all temperatures, but that substantial levels of carbon and oxygen are present. The measured Ti coordination number decreases and the fraction of Ti atoms bound to impurities increases with decreasing deposition temperature. This trend, coupled with decreased electrical resistivity and increased infrared reflectivity, indicates a reduction in material defects at higher temperatures.
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