Abstract
Abstract To optimize the efficiency of AlGaAs solar cells intended for tandem cell applications, a detailed understanding of recombination losses and their relation to material quality and device design is essential. In this paper, recombination losses in Al0.2Ga0.8As are characterized and the implications for high-efficiency cells are examined. Bulk and perimeter recombination in space-charge regions is characterized by dark I–V analysis, and recombination losses in quasi-neutral regions are studied by internal quantum efficiency measurements. Deep-level transient spectroscopy studies are then used to correlate the measured recombination losses to material quality. Finally, the estimated material parameters are used to assess the efficiency-limiting factors in present-day Al0.2Ga0.8As solar cells.
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