Abstract
A comparative study of secondary ion mass spectrometry (SIMS) atomic profiles and electrical profiles for S-implanted GaAs has been made. For all doses, the electrical profiles are in good agreement with the SIMS profiles in the deep side of the samples, where there is no significant implantation damage. For low dose, the implanted S undergoes substantial redistribution during thermal annealing throughout the entire implanted region while for high dose, S redistributes to a much lesser extent in the implanted peak region. It is suggested that unannealed implantation damage and S precipitation are responsible for the low electrical activation of S implants in GaAs at high dose, and residual surface defects may be a limiting factor at low dose.
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