Abstract
ABSTRACTRecent experimental results indicate that diffusion of implanted p-type dopants in GaAs is time dependent under certain conditions. For Mg implanted at a dose of 1 × 1014 cm−2, the diffusion is constant for approximately an hour, then decreases by an order of magnitude or more. Be implanted at 1 × 1013 and 1 ×1014 cm−2 exhibits similar behavior, but with a shorter time before the diffusivity decreases. The diffusivity in 1 × 1013 Mg cm−2 implants, in contrast, remains constant for up to 16 hours. TEM micrographs of Be and Mg implants reveal dislocation loops in the higher dose samples, but not in the lower dose ones. During annealing, the loops grow and decrease in density, eventually disappearing completely from the crystal. This annealing of the loops appears to correlate to the time dependence of the diffusion. This behavior can be explained in terms of the substitutional-interstitial diffusion (SID) mechanism and point defect equilibria.
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