Correlation of Built-In Potential and I–V Crossover in Thin-Film Solar Cells

Abstract

Thin-film solar cells often show a crossover between the illuminated and dark I-V characteristics. Several device specific reasons for crossover exist and have been discussed extensively. In this paper, we show that a low contact-to-contact built-in potential can produce a voltage-dependent photocurrent that leads to I-V crossover at a voltage that is almost exactly the device built-in potential. This mechanism can produce crossover in the absence of carrier trapping or recombination. It can be a contributing factor to crossover, but when an anomalously low contact-to-contact built-in potential exists, it can be the dominant factor. Using numerical simulations, we examine a variety of model solar cell structures with low contact-to-contact built-in potential and show a strong correlation of the crossover and built-in potential voltages. These simulations also suggest that a plot of the illuminated minus dark current may help identify when a low V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">bi</sub> is limiting device performance.