Abstract
We present comprehensive optical studies of a series of as-grown and hydrogenated Ga0.95Al0.05As1–x Nx epitaxial layers with various amounts x of substitutional nitrogen. Photomodulated and contactless electromodulated spectroscopies were performed to gain information about the influence of N incorporation on the band structure. The results are interpreted in terms of the band-anticrossing model and compared to corresponding GaAs:N data. The local vibrational properties of the N atoms studied by Raman and Fourier-transform infrared absorption were found to depend strongly on the Ga/Al nearest-neighbour configurations of N. Correlations between local N environments and global band structure properties are confirmed by comparing results obtained before and after hydrogenation of the samples. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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