Abstract
We analyze the conductance fluctuations for a bulk two-dimensional electron system in a GaN/Al0.15Ga0.85N heterostructure grown on a p-type Si(111) substrate, and calculate the correlation field Bc with the autocorrelation function F(ΔB) = <δG(B + ΔB) - δG(B)>, in the temperature range 0.27 ≤T ≤3 K, which is employed as a self-thermometer to obtain the effective carrier temperature Te as a function of the measurement current I. We find that the temperature dependence agrees well with simple expectations for universal conductance fluctuations in metals, while the observed amplitude is reduced. In the study of hot-carrier phenomena, we also obtain Te ∼I0.5, which agrees with some theoretical prediction.
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