Abstract
We have studied conductance fluctuations of microfabricated silver point contacts, which operate in the ballistic electron-transport regime. The correlation energy E c of the conductance fluctuations has been determined from the voltage correlation of the fluctuations, and from the temperature and modulation voltage dependence of the fluctuation amplitude. For all the devices investigated E c ≃1 meV. This value is in good agreement with a model where the conductance fluctuations are due to quantum interference of electrons backscattered by a few impurities at a distance of the order of the elastic mean free path from the constriction
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