Abstract
At various doping concentrations of Si in GaN films, the correlation between the type of dislocations and photoluminescence (PL) characteristics was investigated. A different broadening behavior of symmetric and asymmetric Bragg peaks as a function of carrier concentration provided qualitative evidence that the type of threading dislocations generated in GaN layers was strongly dependent on the doping levels of Si. PL spectra in conjunction with x-ray rocking curve measurements suggested that the yellow luminescence associated with deep levels was more strongly related with edge dislocations than screw or mixed ones.
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