Correlation between the optical quality and the Fermi level position in GaInNAs alloys

Abstract

It is shown that the Fermi level-stabilization energy, EFS, lies inside the conduction band for GaInNAs with the band gap energy smaller than ∼0.6 eV. Since the formation energy of native point defect varies with the Fermi energy and is very small if the Fermi level is located inside the conduction (or valence) band, the Fermi level pinning at the EFS can be the main obstacle for the growth of good quality GaInNAs-based lasers for long wavelength applications. An engineering of the Fermi level position in GaInNAs can be a promising way to improve the optical quality of GaInNAs alloys.