Abstract
A dominant intrinsic luminescence band, which is due to the surface potential barriers of crystalline grains, and an edge doublet, which arises as an LO-phonon repetition of the e-h band, has been revealed in the low-temperature photoluminescence spectra of fine-grained obliquely deposited films. Doping film with In impurity leads to quenching of the doublet band, while further thermal treatment causes activation of the intrinsic band, the half-width and the blue shift of the red edge of which correlates with the maximum value of anomalously high photovoltage generated by the film.
Highlights
Low-temperature photoluminescence (LTPL) spectroscopy is one of the most sensitive and informative optical methods for studying semiconductors and film structures
We report the results of studying the mechanisms of formation of LTPL spectrum and their relationship with the anomalous photovoltaic (APV) properties of obliquely deposited CdTe and CdTe:In films in dependence of the degree of their structural imperfection
1) The LTPL spectra of fine-grained CdTe films excited by a cw gas-discharge Ar+ laser contains a fundamental emission band with a half-width ∆А ≈ 10 - 20 meV (A line) and its LO- and 2LO-phonon repetitions
Summary
Low-temperature photoluminescence (LTPL) spectroscopy is one of the most sensitive and informative optical methods for studying semiconductors and film structures. LTPL spectra of CdTe crystals has been investigated in detail, and new methods for predicting and controlling electrical properties of semiconductor structures have been proposed on their basis. (2016) Correlation between the Low-Temperature Photoluminescence Spectra and Photovoltaic Properties of Thin Polycrystalline CdTe Films. The role of grain boundaries in the formation of properties of coarse-grained cadmium telluride was investigated by photoluminescence microprobe methods; it was shown that the impurity-defect compositions of the boundary and internal regions of single-crystal grains with sizes of 1 - 2 mm are significantly different [5] [6]. The influence of structural and point defects on the formation of the photoluminescence (PL) spectrum of fine-grained (dcr ≤ 1 μm) semiconductor samples has not been considered to date
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