Abstract
Epitaxial n-GaAs layers with a background impurity concentration of ND-NA<1015 cm−3, grown by chloride vapor phase epitaxy in an open system, exhibit correlation between the electrical properties and the long persistence of the edge photoluminescence lines D0x and D0h related to the hole trapping centers. An increase in the concentration of such trapping centers in n-GaAs leads to a decrease in the mobility of free charge carriers.
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