Correlation between the 1∕f noise parameters and the effective low-field mobility in HfO2 gate dielectric n-channel metal–oxide–semiconductor field-effect transistors

Abstract

In this work, the parameters extracted from the 1∕f noise in silicon n-channel metal–oxide–semiconductor field-effect transistors with different HfO2∕SiO2 gate stacks, corresponding with different equivalent oxide thickness (EOT) are reported and their relationship with the effective low-field mobility is studied. It is found that the 1.5nm EOT transistors show lower 1∕f noise, from which a lower effective trap density is derived, compared with their 2nm EOT counterparts. In addition, the gate stack with the higher trap density yields a lower mobility and a lower mobility scattering coefficient.