Abstract
A strong correlation between the surface step structure and phase separation in metastable GaInAsSb epitaxial layers grown by organometallic vapor-phase epitaxy is reported. The full width at half maximum (FWHM) of the 4 K photoluminescence (PL) peak energy is used as a semiquantitative measure of the degree of phase separation: FWHM values increase with phase separation. The step structure of GaInAsSb grown at 525 °C is vicinal, while it is step bunched for layers grown at 575 °C. The corresponding 4 K PL FWHM data indicate smaller FWHM values for layers grown at the lower temperature, and suggest a lower degree of phase separation. Extreme PL broadening is associated with an aperiodic surface structure. Furthermore, the PL FWHM values decrease when the growth rate increases from 1.2 to 5 μm/h. It is proposed that longer adatom lifetimes, which are associated with longer terrace lengths of a step-bunched surface compared to a vicinal one, allow more time for the adatoms to reach equilibrium and thus phase separate.
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