Abstract
In this work three different growth methods have been used to grow β-Ga2O3 nanostructures. The nanostructures were characterized by Grazing Incident X-Ray Diffraction, Scanning Electron Microscopy, Transmission Electron Microscopy and Photoluminescence Spectroscopy. Photoluminescence spectra for all the samples of β-Ga2O3 nanostructures exhibit an UV and blue emission band. The relative intensity of UV and blue luminescence is strongly affected by the surface defects present on the nanostructures. Our study shows that Photoluminescence intensity of UV and blue luminescence can be reliably used to determine the quality of β-Ga2O3 nanostructures. Further the work opens up the possibility of using UV excitation and subsequent Photoluminescence analysis as a possible means for oxygen sensing. The Photoluminescence mechanism in β-Ga2O3 nanostructures is also discussed.
Highlights
The nanostructures were characterized by Grazing Incident X-Ray Diffraction, Scanning Electron Microscopy, Transmission Electron Microscopy and Photoluminescence Spectroscopy
The nanostructures are characterized by XRD, Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM) and PL spectroscopy
The XRD and TEM results show that all the β-Ga2O3 nanostructures are single crystalline
Summary
Gallium Oxide (β-Ga2O3) is a wide band gap compound semiconductor (Eg ∼4.8- 4.9 eV) which exhibits good conduction properties due to a shallow donor band related to oxygen vacancies[1,2] and a broad band emission in the UV, blue and green regions.[1,3,4,5,6,7,8] It has attracted significant attention as a transparent conducting oxide in optoelectronics,[9,10] solar blind photo detectors,[11] optical waveguides[12,13] and host material for phosphors.[13,14] Besides this, β-Ga2O3 nanostructures show good sensing properties with a reversible response to oxygen (O2) and CO gases.[15]. It is important to study the growth parameters and techniques that can influence the optical sensing property in β-Ga2O3 nanostructures. The furnace temperature was ramped to 950oC and growth was done for the period of three hours in a continuous flow of nitrogen at 0.5 lpm (gas temperature and pressure through the flow meter was ∼298K and 1 atm respectively). This sample is denoted as sample 1. The furnace was naturally cooled down to room temperature in a 0.5 lpm continuous flow of nitrogen This sample is denoted as sample 3A.
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