Abstract
AbstractNovel BaCa2M3O9 (M = Si, Ge) microwave dielectric ceramics were prepared via solid‐state reaction with sintering at 1125°C–1275°C for 5 h. Single‐phase BaCa2M3O9 (M = Si, Ge) ceramics were obtained according to stoichiometry. The single‐phase BaCa2Ge3O9 ceramic was confirmed through Rietveld refinement and high‐resolution transmission electron microscopy/selected area electron diffraction and synthesized for the first time. The BaCa2M3O9 (M = Si, Ge) exhibited a triclinic structure with a P space group and good microwave dielectric properties. The εr, Q × f, and τf values of BaCa2M3O9 (M = Si, Ge) ceramics are mostly dominated by the relative density, ionic polarizability, relative covalence, and bond energy of M–O bond, respectively. A high Q × f value (61 800 GHz at 16.3 GHz) was obtained in BaCa2Ge3O9 ceramic due to its high rc (Ge–O) and low intrinsic dielectric loss. The BaCa2Si3O9 ceramic exhibited small |τf| value (‒36.4 ppm/°C) due to its large ESi‐O. Excellent microwave dielectric properties (εr = 8.31, Q × f = 61 800 GHz, and τf = ‒58.7 ppm/°C) were obtained for the BaCa2Ge3O9 ceramic.
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