Abstract
GaN films were grown on silica substrates by metalorganic chemical vapor deposition as a function of film thickness. It was found that yellow luminescence (YL) emission increased as the (1 0 1 1) atomic facets became dominant. It was assumed that gallium vacancies and impurity complexes on the atomic facets of (1 0 1 1) were responsible for the YL emissions. Furthermore, the YL emitters were not concentrated near the interface between the substrate and the film but distributed through the entire film.
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